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1 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone separated by 1 mhz. parameters units min typ max testing frequency mhz 2000 gain db 12 13 s11 db - 20 s22 db - 15 output ip3 dbm 36 38 noise figure db 0.9 1.1 output p1db dbm 20 22 current ma 45 60 80 device voltage v 5 * please find the max. input power data from http://www.asb.co.kr/p df/maximum_input_power_analysis.pdf parameters units typical frequency mhz 150 900 2000 2450 2600 gain db 23.5 19 13 11.5 11 s11 db - 15 - 20 - 20 - 20 - 18 s22 db - 1 1 - 15 - 15 - 16 - 15 output ip3 1) dbm 33 35.5 38 37.5 37.5 noise figure db 0.6 0.9 0.9 1.1 1.15 outp ut p1db dbm 2 1 .5 22 22 22 22 current ma 60 60 60 60 60 device voltage v 5 5 5 5 5 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 1 50 c device voltage +6 v operating junction temper a ture + 150 c input rf power ( cw, 50ohm matched)* 22 dbm feature s description package style: sot - 363 typ ical perfor m ance abso lute maximum ratings 13 db gain at 2000 mhz 22 dbm p1db at 2000 mhz 38 dbm oip3 at 2000 mhz 0.9 db nf at 2000 mhz mttf > 100 years single supply the ASL13W, a wideband linear low noise amplifier mmic, has a low noise and high linearit y at low bias current, being suitable for use in both receiver and transmitter of telecommunic a tion systems up to 3 ghz. s11 down to C 20 db is easily achieved for low noise application to provide a good productivity. the amplifier is available in a n sot - 36 3 package and passes through the stringent dc, rf, and reliabi l ity tests. application circuit if ( 50 ~ 450 mhz ) tetra lte cdma gsm wcdma 350 ~ 500 mhz 960 ~ 1200 mhz 2300 ~ 2600 mhz product specifications pin configuration pin no. function 1 rf in 4 rf out / bias 2,3,5,6 gnd
2 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier note : 1. the number and size of ground via holes in a circuit board is critical for thermal and rf grounding consi d- erations. 2. we recommend that the ground via holes be placed on the bottom of lead pin 2 for better rf and thermal pe r- formance, as shown in the dra w ing at the left side. pin no. function pin no. function. 1 rf in 4 rf out / bias 2 gnd 5 gnd 3 gnd 6 gnd mounting recommendation (in mm) outline drawing symbols dimensions (in mm) min nom max a 0.90 1. 00 1.10 a1 0.025 0.062 0.10 a2 0.875 0.937 1.00 b 0.20 0.30 0.40 c 0.10 0.125 0.15 d 1.90 2.00 2.10 f 1.15 1.25 1.35 e1 2.00 2.10 2.20 e -- 0.65bsc -- e1 -- 1.30bsc -- l -- 0.425ref -- esd classification hbm class 1a voltage level: 400 v mm class a voltage level: 50 v caution: esd - sensitive device! moisture sensitivity level (msl) level 3 at 260 c reflow esd classification & mois ture sensitivity level
3 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier r d (ohm) r b (ohm) v d (v) ic (ma) cdma wcdma r d (ohm) r b (ohm) v d (v) ic (ma) cdma wcdma nf (db) oip3 (dbm) nf (db) oip3 (dbm) nf (db) oip3 (dbm) nf (db) oip3 (dbm) 8.2 5.6k 4.47 60 0.89 36 0.9 38.2 20 6.8k 3.87 51 0.83 35.3 0.89 37 5.1k 4.58 56 0.89 34.5 0.89 36.2 6.2k 4.09 47 0.83 34 0.89 36 4.7k 4.87 39 0.91 32 0.93 33.4 5.6k 4.28 39 0.86 32.2 0.89 34.7 4.3k 4.9 28 0.88 28.7 0.9 30.1 5.1k 4.35 32 0.86 29.8 0.9 31.8 10 5.6k 4.38 58 0.87 35.6 0.89 37.5 4.7k 4.5 28 0.86 27.2 0.91 29.5 5.1k 4.49 45 0.82 33.5 0.92 35.4 30 8.2k 3.31 57 0.8 34.9 0.88 37 4.7k 4.6 38 0.84 31.4 0.9 32.2 7.5k 3.47 50 0.83 33 .9 0.87 36.3 4.3k 4.71 27 0.85 27.8 0.94 29.3 6.8k 3.68 44 0.82 32.8 0.87 35.3 12 6.2k 4.25 62 0.82 35.9 0.91 37.6 6.2k 3.84 38 0.83 30.8 0.88 33.4 5.6k 4.33 51 0.82 35.1 0.89 36.8 5.6k 4.01 33 .81 28.7 0.89 31.6 5.1k 4.49 42 0.81 32.4 0.91 34 5 .1k 4.19 29 0.85 26.7 0.91 29.5 4.7k 4.57 33 0.84 30 0.91 31.5 4.3k 4.7 28 0.86 27 0.91 29.2 15 6.2k 4.15 57 0.82 35.3 0.93 37 5.6k 4.28 49 0.85 34.1 0.89 35.9 5.1k 4.4 38 0.84 31.7 0.88 33.3 4.7k 4.54 29 0.87 28.5 0.9 30.6 4.3k 4.63 26 0.85 26.1 0.92 28.9 * test application circuit : ASL13W cdma / wcdma application circuit * oip3 test condition : freq. C 894mhz / C 2140mhz, +10dbm output power per tone * v d : applied voltage to the devic e oip3 & noise figure vs. bias resistor
4 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone sep a rated by 1 mhz. 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 50 150 300 450 magnitude s21 (db) 24.7 23.5 22.3 21 magnitude s11 (db) - 12 - 15 - 14 - 12 magnitude s22 (db) - 12 - 11 - 12 - 13 output p1db (dbm) 21.5 21.5 21.5 21.5 output ip3 1) ( dbm) 31 33 35 35 noise figure (db) 0.8 0.6 0.8 0.8 device voltage (v) 5 5 5 5 current (ma) 60 60 60 60 note: a shunt r b is a bias resistor requ i site to operat e ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to the device. a user can easily reduce an operating current by choosing different r b values with minimized loss only in oip3 and p1db. if 50 ~ 450 +5 v 0 100 200 300 400 500 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 100 200 300 400 500 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 100 200 300 400 500 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) rf out asl 13 w rf in c 4 = 100 pf vs = 5 v b d r = 8 . 2 w r = 5 . 6 k w r 1 = 1 . 6 k w c 3 = 1 nf c 1 = 1 m f c 2 = 1 m f l 1 = 1 . 2 mh c 5 = 10 m f
5 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone sep a- rated by 1 mhz. board l ayout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 420~460 magnitude s21 (db) 23 magnitude s11 (db) - 15 magnitude s22 (db) - 18 output p1db (dbm) 22 output ip3 1) (dbm) 34 noise figure (db) 0.7 device voltage (v) 5 current (ma) 60 tetra 420 ~ 460 +5 v note: a shunt r b is a bias resistor requ i site to operate ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to the device. a user can easily reduce an operating current by choosing different r b values with minimized loss only in oip3 and p1db. 0 200 400 600 800 1000 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 200 400 600 800 1000 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 200 400 600 800 1000 -35 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) rf out ASL13W rf in c3=100 pf vcc=5 v 2 mm b d r =8.2 w r =5.6 k w c4=10 nf l2=100 nh c2=100 pf c1=47 pf l1=27 nh
6 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 698~787 magnitude s21 (db) 19.8 magnitude s11 (db) - 20 magnitude s22 (db) - 13 output p1db (dbm) 22 output ip3 1) (dbm) 34.5 noise figure (db) 0.75 device voltage (v ) 5 current (ma) 60 lte 698 ~ 787 +5 v note: a shunt r b is a bias resistor requ i site to operate ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to t he device. a user can easily reduce an operating current by choosing different r b values with minimized loss only in oip3 and p1db. l2=100 nh c2=100 pf rf out ASL13W c1=18 pf rf in c3=100 pf c4=10 n f vcc=5v l1=12 nh 2 mm b d r =8.2 w r =5.6 k w 400 500 600 700 800 900 1000 0 5 10 15 20 25 s21 [db] frequency [mhz] 400 500 600 700 800 900 1000 -30 -25 -20 -15 -10 -5 0 s11 [db] frequency [mhz] 400 500 600 700 800 900 1000 -25 -20 -15 -10 -5 0 s22 [db] frequency [mhz] 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
7 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output po wer of +10 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x 40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 824 894 890 960 magnitude s21 (db) 19.5 19 19 18.5 magnitude s11 (db) - 20 - 20 - 2 0 - 18 magnitude s22 (db) - 14 - 15 - 15 - 16 output p1db (dbm) 22 22 output ip3 1) (dbm) 35 35.5 noise figure (db) 0.9 0.95 device voltage (v) 5 5 current (ma) 60 60 cdma & gsm 824 ~ 960 +5 v 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) l2=100 nh c2=100 pf rf out ASL13W c1=12 pf rf in c3=100 pf c4=10 n f vcc=5v l1=10 nh 2 mm b d r =8.2 w r =5.6 k w 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 30 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 600 700 800 900 1000 1100 1200 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 600 700 800 900 1000 1100 1200 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c note: a shunt r b is a bias resistor requ i site to operate ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to the device. a user can easily reduce an operating current by choosing different r b values with minimized loss only in oip3 and p1db.
8 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier p1db vs. temperature current vs. temperature output ip3 vs . tone power (frequency = 900 mhz) gain vs. temperature -60 -40 -20 0 20 40 60 80 100 0 20 40 60 80 100 120 current (ma) temperature ( o c) -60 -40 -20 0 20 40 60 80 100 16 17 18 19 20 21 22 gain (db) temperature ( o c) frequency = 900 mhz -60 -40 -20 0 20 40 60 80 100 16 18 20 22 24 26 28 p1db (dbm) temperature ( o c) frequency = 900 mhz 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0 10 20 30 40 50 60 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c nf vs. temperature (frequency = 850mhz) -60 -40 -20 0 20 40 60 80 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 nf (db) temperature ( o c) frequency = 850 mhz
9 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 1920 1980 2110 2170 magnitude s21 (db) 13.2 13 12.3 12.2 magnitude s11 (db) - 20 - 20 - 18 - 17 magnitude s22 (db) - 15 - 15 - 15 - 15 output p1db (dbm) 22 22 output ip3 1) (dbm) 38 38 noise figure (db) 0.9 0.95 device voltage (v) 5 5 current (ma) 60 60 wcdma 1920 ~ 2170 +5 v 1700 1800 1900 2000 2100 2200 0 5 10 15 20 25 gain (db) frequency (mhz) 1700 1800 1900 2000 2100 2200 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 1700 1800 1900 2000 2100 2200 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) l2=100 nh c3=68 pf rf out ASL13W c2=68 pf rf in c4=100 pf c5=10 n f vcc=5v l1=39 nh c1=1 pf 5 mm d b r =5.6 k w r =8.2 w note: a shunt r b is a bias resistor requ i site to operate ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to the device. a user can easily reduce an o perating current by choosing different r b values with minimized loss only in oip3 and p1db.
10 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier nf vs. temperature -60 -40 -20 0 20 40 60 80 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 nf (db) temperature ( o c) frequency = 2000 mhz
11 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 350 430 500 magnitude s21 (db) 24 23 22.5 magnitude s11 (db) - 15 - 15 - 15 magnitude s22 (db) - 18 - 18 - 20 output p1db (dbm) 21 21.5 21.5 output ip3 1) (dbm) 33 34 34.5 noise figure (db) 0.85 0.85 0.85 device voltage (v) 5 5 5 current (ma) 60 60 60 note: a shunt r b is a bias resistor requ i site to operate ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to the device. a user can easily reduce an operating current by choosing different r b values with minimized loss only in oip3 and p1db. 350 ~ 500 +5 v rf out ASL13W rf in c3=100 pf vcc=5v 2 mm b d r =8.2 w r =5.6 k w c4=10 nf l1=100 nh c2=82 pf c1=82 pf l2=39 nh 0 200 400 600 800 1000 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 200 400 600 800 1000 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 200 400 600 800 1000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
12 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 960 1200 magnitude s21 (db) 18.5 17 magnitude s11 (db) - 15 - 15 magnitude s22 (db) - 15 - 17 output p1db (dbm) 22 22 output ip3 1) (dbm) 35.5 37 noise figure (db) 0.95 0.9 device voltage (v) 5 5 current (ma) 6 0 60 960 ~ 1200 +5 v note: a shunt r b is a bias resistor requ i site to operate ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to the device. a user ca n easily reduce an operating current by choosing different r b values with minimized loss only in oip3 and p1db. l2=100 nh c2=100 pf rf out ASL13W c1=6 pf rf in c3=100 pf c4=10 n f vcc=5v l1=10 nh 2 mm b d r =8.2 w r =5.6 k w 600 800 1000 1200 1400 1600 0 5 10 15 20 25 gain (db) frequency (mhz) 600 800 1000 1200 1400 1600 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 600 800 1000 1200 1400 1600 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
13 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 2300 2450 2600 magnitude s21 (db) 12 11.5 11 magnitude s11 (db) - 20 - 20 - 18 magnitude s22 (db) - 16 - 16 - 15 output p1db (dbm) 22 22 22 output ip3 1) (dbm) 38 37.5 37.5 noise figure (db) 1.0 1.1 1.15 device voltage (v) 5 5 5 current (ma) 60 60 60 2300 ~ 2600 +5 v 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) l2=39 nh c3=68 pf rf out ASL13W c2=68 pf rf in c4=100 pf c5=10 n f vcc=5v l1=39 nh c1=1 pf d b r =5.6 k w r =8.2 w note: a shun t r b is a bias resistor requ i site to operate ASL13W properly, while r d as a vo l- tage drop resistor is added to apply 4.4 v to the device. a user can easily reduce an operating current by choosing different r b values with minimized loss only in oip3 and p1db . 1800 2000 2200 2400 2600 2800 3000 0 5 10 15 20 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 1800 2000 2200 2400 2600 2800 3000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 1800 2000 2200 2400 2600 2800 3000 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c
14 / 14 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 april 2012 as l13w 5 - 300 0 mhz mmic amplifier p1db vs. temperature current vs. temperature output ip3 vs . tone power (frequency = 2450 mhz) gain vs. temperature -60 -40 -20 0 20 40 60 80 100 0 20 40 60 80 100 current (ma) temperature ( o c) -60 -40 -20 0 20 40 60 80 100 0 4 8 12 16 20 gain (db) temperature ( o c) frequency = 2450 mhz -60 -40 -20 0 20 40 60 80 100 16 18 20 22 24 26 p1db (dbm) temperature ( o c) frequency = 2450 mhz 6 7 8 9 10 11 12 13 14 15 16 17 0 10 20 30 40 50 60 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c

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